ABOUT US
15 Years

The company was founded

ABOUT US

Nanjing Crystal Growth & Energy Equipment Co., Ltd (CGEE)

Founded in 2012, CGEE is a leading company specializing in developing and manufacturing large-sized Si and SiC crystal growers, as well as downstream wafer processing and epitaxy equipment. In addition, we offer our customers various customized crystal growers and turn-key solutions to give them better productivity, higher material yield and automation level.

 

As a publicly listed company on the Chinese STAR market (Stock #: 688478), our missions are to bring innovations to the crystal growth frontier and revolutionize the semiconductor material ecosystem with cutting-edge equipment and technologies to move the industry forward.

2023 Years

Listing @STAR Market

200 +

Employees

100 +

Patents

Twintop

core team

Our management and R&D teams possess extensive experience in the international semiconductor industry. Unlike most Chinese equipment suppliers, we have strong expertise in hot zone design, and crystal growth process development. We offer our customers turn-key solutions, including (crystal grower + hot zone + process) to get them a quick start for product development. More importantly, we highly value talents and continuously attract outstanding ones to join our R&D team, which fuels our capabilities for innovations and cutting-edge technologies.

core team

history

图片名称

history

2025


The headquarters production and R&D center officially commenced operations.

2024


Iterated on products & expanded product portfolio.

2023


The company completed its IPO and listed on the STAR Market.

2022


The company's IPO application for the STAR Market was approved.

2021


Received an order from an overseas customer for 12-inch semiconductor CZ grower; secured investment from multiple renowned institutions.

2020


Completed first round of external financing; restructured and renamed the company as Crystal Growth & Energy Equipment (CGEE) Co., Ltd.

2019


Began volume sales of 12-inch semiconductor CZ growers and SiC single crystal growers.

2018


The first third-generation compound semiconductor SiC single crystal growers were delivered to the market.

2017


Launched R&D for third-generation compound semiconductor SiC single crystal growers.

2016


Successfully developed and delivered the first 12-inch semiconductor CZ grower to Shanghai Zing Semiconductor Corporation.

2015


Nanjing Advanced Semiconductor Technology (NAST) Co., Ltd. was registered and established

2014


An R&D project for 12-inch semiconductor CZ grower was launched.

2013


Established a US-based R&D center—LP Renewable Energy LLC.

2012


The company was registered and established; 85kg–125kg sapphire single crystal furnaces were delivered to the market in June, 2012.

2025

2024

2023

2022

2021

2020

2019

2018

2017

2016

2015

2014

2013

2012

Corporate Culture

Honesty&Integrity

01

Honesty & Integrity

Passion &Dedication

02

Passion & Dedication

Team Work&Team Support

03

Team Work & Team Support

Modesty&Moving Forward

04

Modesty & Moving Forward

Honors

High‑Tech Certificate

High‑Tech Certificate

Jiangsu Provincial Semiconductor Crystal Growth Equipment Engineering Technology Research Center

Jiangsu Provincial Semiconductor Crystal Growth Equipment Engineering Technology Research Center

National-level “Little Giant” Enterprise Specialized, Refined, Differentiated, and Innovative

National-level “Little Giant” Enterprise Specialized, Refined, Differentiated, and Innovative

Jiangsu Province “Specialized, Refined, Differentiated, and Innovative” Enterprises

Jiangsu Province “Specialized, Refined, Differentiated, and Innovative” Enterprises

Nanjing City’s Innovative Product – 6-Inch Silicon Carbide Single Crystal Growth Furnace

Nanjing City’s Innovative Product – 6-Inch Silicon Carbide Single Crystal Growth Furnace

Nanjing Innovative Product – 12‑inch Semiconductor‑Grade Silicon Single Crystal Furnace

Nanjing Innovative Product – 12‑inch Semiconductor‑Grade Silicon Single Crystal Furnace

South Korean Invention Patent Certificate

South Korean Invention Patent Certificate

A Thermal Field and Crystal Growth Method for Use in Transverse Superconducting Magnetic Fields

A Thermal Field and Crystal Growth Method for Use in Transverse Superconducting Magnetic Fields

A Water-Cooled Screen Alignment Component and an Alignment Method

A Water-Cooled Screen Alignment Component and an Alignment Method

A Thermal Field and Single Crystal Furnace for Controlling Convective Flow in Adjustable Semiconductor Monocrystalline Silicon Melts

A Thermal Field and Single Crystal Furnace for Controlling Convective Flow in Adjustable Semiconductor Monocrystalline Silicon Melts

A Heater Suitable for Semiconductor‑Grade Single‑Crystal Silicon Czochralski Furnaces and an Assembly Method Therefor

A Heater Suitable for Semiconductor‑Grade Single‑Crystal Silicon Czochralski Furnaces and an Assembly Method Therefor

A Horizontal Adjustment Device for Silicon Single-Crystal Furnaces and a Silicon Single-Crystal Furnace

A Horizontal Adjustment Device for Silicon Single-Crystal Furnaces and a Silicon Single-Crystal Furnace

A high‑quality semiconductor silicon material consumable growth method

A high‑quality semiconductor silicon material consumable growth method

An image recognition control method for crystal growth of semiconductor silicon materials

An image recognition control method for crystal growth of semiconductor silicon materials

A Method for Positioning Electromagnetic Coils in a Silicon Carbide Crystal Growth Furnace

A Method for Positioning Electromagnetic Coils in a Silicon Carbide Crystal Growth Furnace

A crystal weighing device

A crystal weighing device

Crystal Balancing Enhancement Device and Method for Sapphire Single-Crystal Furnaces

Crystal Balancing Enhancement Device and Method for Sapphire Single-Crystal Furnaces

A heating element for a sapphire crystal growth furnace and the crystal growth furnace itself.

A heating element for a sapphire crystal growth furnace and the crystal growth furnace itself.