China’s first 12‑inch, 350 kg semiconductor monocrystalline silicon furnace has been delivered to the customer for use.

Release Time:

Sep 09,2016

　　After nearly a year of research and development, CGEE delivered the country’s first 12‑inch semiconductor‑grade silicon single crystal furnace to a customer in September 2016, successfully growing a 350 kg single crystal silicon ingot and achieving a breakthrough from zero in China.

　　CGEE is committed to independent innovation and possesses core technologies for the preparation of semiconductor‑grade silicon materials, including optimized thermal fields and fully automated crystal growth processes. Its products are primarily used in the field of 8-inch and larger semiconductor silicon wafers, meeting the performance and cost requirements for commercial production of semiconductor wafers at 28 nm and above. The company’s core team members have extensive experience working at multinational corporations, boasting many years of technical and managerial expertise, while also integrating top talent from leading domestic listed companies. CGEE is dedicated to becoming an expert in equipment and processes for the preparation of semiconductor silicon materials, continuously striving to enhance China’s independent core competitiveness in this field.

The company’s patent count has reached a new record high.

CGEE has been granted 5 invention patents.

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