Resistance Heating PVT Silicon Carbide Crystal Growth Furnace

SCRP1200 Series

Resistance Heating PVT Silicon Carbide Crystal Growth Furnace

Employs multi-segment resistance heating, enabling dynamic adjustment of the temperature gradient during crystal growth;

01

Gas path planning and thermal field protection technology reduce thermal field decay during crystal growth, increase thermal field lifespan, and improve thermal field stability;

02

Equipped with a crystal growth interface visualization system to monitor crystal growth status in real time, thereby improving crystal growth efficiency and yield.

03

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