Tantalum Carbide (TaC) Coated Graphite Parts

Tantalum carbide-coated graphite components are specifically designed for thermal applications in semiconductor equipment, suitable for core processes such as single crystal growth, epitaxial growth, and MOCVD. A dense tantalum carbide coating is formed on the surface of high-purity graphite through chemical vapor deposition. With its high melting point, thermal shock resistance, and plasma corrosion resistance, it effectively resists corrosion from high-temperature halogen atmospheres, significantly extending the lifespan of graphite components. Simultaneously, the extremely low metal release rate of the coating ensures wafer cleanliness, improving thin film growth quality and yield. The coating thickness is uniform and controllable, with strong thermal adaptability, and its technical specifications reach domestic first-class and international advanced levels.

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Tantalum carbide coatings are prepared using CVD technology, resulting in uniform and controllable thickness. The dense structure completely isolates the graphite substrate from reactive gases, achieving a coating purity of over 99.999%, and resistance to halogens and highly corrosive atmospheres.

The coating exhibits excellent adhesion to the substrate, enabling long-term service under severe thermal cycling from room temperature to 2000℃, significantly extending the lifespan of graphite components and reducing equipment maintenance frequency.

Precise control of CVD deposition parameters allows for the acquisition of various microstructures, such as columnar or fine-grained crystals, perfectly matching diverse process environments from grain growth to epitaxy.

Key tolerances are <±0.05mm. Full-process SPC control combined with unique traceability ensures batch consistency, providing reliable support for large-scale mass production.

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