Horizontal Silicon Carbide Epitaxial Furnace

Stable process and high growth rate;

Multi-channel gas intake structure, wafer surface zone control, and good film thickness and concentration uniformity;

Simple thermal design, convenient assembly and disassembly, and extremely low consumable costs;

Equipped with EFFM wafer loading system to eliminate human-caused process contamination;

Our address

No. 49, Zonghui Road, Nanjing Economic and Technological Development Zone

sales@cgee.com.cn

Email us anytime for any kind of quety.

+86-025-86660150

Call us any kind suppor, we will wait for it.

Get a quote

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