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SCG200 Series Semiconductor‑Grade Single‑Crystal Silicon Furnace
| Device Model |
Semiconductor‑Grade Single Crystal Silicon Furnace SCG200MCZ |
| Parameter Item |
Technical Indicators |
| Device dimensions |
7500x5500x11100mm |
| Device weight |
≈36t |
| Ultimate vacuum |
<1 Pa |
| Heating Method |
Resistance heating |
| Temperature control range |
900–1600℃ |
| Crystal size |
8 inches |
| Crystal Growth Method |
MCZ |
| Chamber Cooling Method |
Water cooling |
| Process Gas Type |
Ar, N2 |
Our address
No. 49, Zonghui Road, Nanjing Economic and Technological Development Zone
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Our website uses cookies and similar technologies to personalize the advertising shown to you and to help you get the best experience on our website. For more information, see our Privacy & Cookie Policy
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Our website uses cookies and similar technologies to personalize the advertising shown to you and to help you get the best experience on our website. For more information, see our Privacy & Cookie Policy
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