SCG300 Series Semiconductor‑Grade Single‑Crystal Silicon Furnace

1113169347569405952

SCG300 Series Semiconductor‑Grade Single‑Crystal Silicon Furnace

Device Model

Semiconductor‑Grade Single Crystal Silicon Furnace SCG300MCZ

Parameter Item

Technical Indicators

Device dimensions

7500x5500x11400mm

Device weight

≈38t

Ultimate vacuum

<1 Pa

Heating Method

Resistance heating

Temperature control range

900–1600℃

Crystal size

8–12 inches

Crystal Growth Method

MCZ

Chamber Cooling Method

Water cooling

Process Gas Type

Ar, N2


Our address

No. 49, Zonghui Road, Nanjing Economic and Technological Development Zone


sales@cgee.com.cn

Email us anytime for any kind of quety.


+86-025-86660150

Call us any kind suppor, we will wait for it.

Get a quote

CONTACT US
%{tishi_zhanwei}%