Silicon Carbide Single Crystal Furnace SCRP1200 Series – Resistive Heating PVT

1113169360840183808

Silicon Carbide Single Crystal Furnace SCRP1200 Series – Resistive Heating PVT

Parameter Item

Technical Indicators

Device Model

SCRP1200

Device dimensions

2600x2600x4400mm

Crystal Growth Method

PVT

Applicable Substrate Size

8 inches

Maximum Operating Temperature

2400℃

Vacuum System

Ultimate vacuum: 5 × 10⁻⁴ Pa; pressure rise rate ≤ 5 Pa/12 h.

Air circuit system

Gas types: Ar, N₂, H₂, etc.


Our address

No. 49, Zonghui Road, Nanjing Economic and Technological Development Zone


sales@cgee.com.cn

Email us anytime for any kind of quety.


+86-025-86660150

Call us any kind suppor, we will wait for it.

Get a quote

CONTACT US
%{tishi_zhanwei}%