Silicon Carbide Single Crystal Furnace LP Series

1113169363381932032

Silicon Carbide Single Crystal Furnace LP Series

Parameter Item

Technical Indicators

Device Model

LP-SCMP620 LP-SCMP1200 LP-SCRP1200

Device dimensions

2950x3250x3700mm 4200x3600x5000mm 2604x2477x3904mm

Applicable Substrate Size

6 inches 6 inches 6 inches (upgradeable to 8 inches)

Heating Method

Induction Method Induction Method Resistance heating
Crystal Growth Method

LPE

Maximum Operating Temperature

2200℃

Vacuum System

Ultimate vacuum: 5 × 10⁻⁴ Pa; pressure rise rate ≤ 5 Pa/12 h.

Air circuit system

Gas types: Ar, N₂, H₂, etc.


Our address

No. 49, Zonghui Road, Nanjing Economic and Technological Development Zone


sales@cgee.com.cn

Email us anytime for any kind of quety.


+86-025-86660150

Call us any kind suppor, we will wait for it.

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