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MSIR1050 Series Silicon Crystal Growth Furnace for Integrated Circuit Etching
| Parameter Item | Technical Indicators |
| Device Model | MSIR1050 |
| Device dimensions | 5000x2840x5872mm |
| Crystal size | Φ590x525mm |
| Charging amount | 335 ± 5 kg (mixed loading of cake material and seed material) |
| Crystal Growth Method | Directional Solidification Method |
| Maximum Operating Temperature | 1560℃ |
| Heating Method | Resistance heating |
| Vacuum System | Ultimate vacuum: 0.1 mbar; pressure rise rate ≤ 6 Pa/h |
| Air circuit system | Gas types: Ar, N₂, etc. |
Our address
No. 49, Zonghui Road, Nanjing Economic and Technological Development Zone
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Our website uses cookies and similar technologies to personalize the advertising shown to you and to help you get the best experience on our website. For more information, see our Privacy & Cookie Policy
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