SCG400 Series Semiconductor‑Grade Single‑Crystal Silicon Furnace

1113169350136320000

SCG400 Series Semiconductor‑Grade Single‑Crystal Silicon Furnace

Device Model

Semiconductor‑Grade Single Crystal Silicon Furnace SCG400MCZ

Parameter Item

Technical Indicators

Device dimensions

7500x5500x11300mm

Device weight

≈38t

Ultimate vacuum

<1 Pa

Heating Method

Resistance heating

Temperature control range

900–1600℃

Crystal size

12 inches, 14–20 inches

Crystal Growth Method

MCZ

Chamber Cooling Method

Water cooling

Process Gas Type

Ar, N2


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No. 49, Zonghui Road, Nanjing Economic and Technological Development Zone


sales@cgee.com.cn

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+86-025-86660150

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