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Silicon Carbide Single-Wafer Epitaxy Furnace SCML320A
| Parameter Item | Technical Indicators |
| Device Model | SCML320A |
| Device dimensions | 4650*1450*2690mm |
| Growth rate | ≥60 µm/h |
| Background concentration | ≤1E+14 cm +3 |
| Film thickness growth | 1–100 μm |
| Temperature control accuracy | ±0.1℃ |
| Defect | <0.2 cm -2 |
| Doping uniformity | <2.0% |
| Film thickness uniformity | <1.0% |
| Roughness | <0.2 nm |
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No. 49, Zonghui Road, Nanjing Economic and Technological Development Zone
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Our website uses cookies and similar technologies to personalize the advertising shown to you and to help you get the best experience on our website. For more information, see our Privacy & Cookie Policy
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Our website uses cookies and similar technologies to personalize the advertising shown to you and to help you get the best experience on our website. For more information, see our Privacy & Cookie Policy
These cookies are necessary for basic functions such as payment. Standard cookies cannot be turned off and do not store any of your information.
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