SCG600 Series Semiconductor‑Grade Single‑Crystal Silicon Furnace

SCG600 Series Semiconductor‑Grade Single‑Crystal Silicon Furnace

Device Model

Silicon Component Single-Crystal Furnace SCG600MCZ

Parameter Item

Technical Indicators

Device dimensions

8000x5500x10600mm

Device weight

≈30 tons

Ultimate vacuum

≤ 2Pa

Heating Method

Resistance heating

Temperature control range

900–1600℃

Crystal size

18–24 inches

Crystal Growth Method

MCZ

Chamber Cooling Method

Water cooling

Process Gas Type

Ar


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No. 49, Zonghui Road, Nanjing Economic and Technological Development Zone


sales@cgee.com.cn

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+86-025-86660150

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